抄録
The effects of N2 [mass number: 28] and O2 [mass number: 32] gas impurities on ZnS host material and the emission center in the active layers of a thin-film electroluminescent device were examined for the impurity gas concentration. Electron spin resonance (ESR) experiments were performed to examine the Mn2+ cohesive state. As the partial pressure of N2 increased, the L30 and the maximum luminance efficiency decreased, the threshold electric field strength increased due to the reduction in the concentration of the isolated single Mn2+. When the partial pressure of N2 was increased, the isolated single Mn2+ and the clustered Mn2+ concentration decreased and the interaction between the isolated single Mn2+ and the clustered Mn2+ increased. When O2 gas impurity is introduced to the sputtering environment, some Zn atoms combine with O causing a deficiency of S.
