抄録
We investigated the effect of ion-beam irradiation on the growth of graphene at the 3C-SiC(111)/SiO2/Si(111) substrate by the surface decomposition method. When Ar+ ions with 1 keV were irradiated to the sample surface for 1 h and then annealed at 1200℃ for 1 min, graphene layers were formed. The graphene surfaces were evaluated by scanning tunneling microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. We found that the growth of graphene at the surface decomposition method is promoted by ion-beam irradiation. This result indicated that ion-beam irradiation caused breakage of Si-C bonds and induced desorption of Si atoms from the surface.
