Journal of the Vacuum Society of Japan
Online ISSN : 1882-4749
Print ISSN : 1882-2398
ISSN-L : 1882-2398
解説
酸化物半導体ガスセンサのための材料作製技術:最近の研究動向
北村 雅季
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ジャーナル フリー

2017 年 60 巻 11 号 p. 415-420

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 Oxide-semiconductor based gas sensors have been intensively investigated in order to improve the sensitivity and selectivity of a certain gas. This article reviews the recent research progress of gas sensors having oxide semiconductor as an active layer, in particular detecting for H2 and volatile organic compounds. The semiconductor material for gas sensors reported in this article includes SnO2, WO3, ZnO, In2O3, and NiO. The sensitivity of gas sensors having different structures and semiconductors is compared.

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© 2017 一般社団法人日本真空学会
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