熱プラズマジェットを用いた熱処理技術の開発と電子デバイスプロセスへの応用

抄録

　Atmospheric pressure micro-thermal-plasma-jet (μ-TPJ) irradiation on amorphous silicon (a-Si) strips and its application to thin film transistor (TFT) fabrication have been investigated. Strip channel with the width smaller than 3 μm is effective to eliminate random grain boundaries by filtering effect. High speed scanning of μ-TPJ suppresses mass transfer of molten Si and generation of in-grain defects. By introducing strip channel, high performance TFTs with a high average field effect mobility (μ_FE) of 503 cm²V⁻¹s⁻¹ (n-channel) are successfully fabricated with small device to device variation. CMOS shift register fabricated with strip channel TFTs was operated by 5V power supply at 50MHz. These results indicate that μ-TPJ crystallization of strip channel is quite promising for next generation TFT applications.