Host: The Japan Society of Vacuum and Surface Science
The structure of semiconductor devices has changed to nanometer-scale three-dimensional ones in order to meet the requirement of low power consumption and high capacity. Atomic layer processing, which offers excellent ability to control uniformity, conformality, and thickness, will be important for next generation of semiconductor manufacturing. In this talk, recent progress in atomic layer etching is reviewed after briefly introducing the technology trends in the fabrication of semiconductor devices. The topics included are fundamental of atomic layer etching, typical procedures of atomic layer etching, and atomic layer etching of various materials.