Carrier transport properties of high-frequency epitaxial graphene transistor by using yttrium oxide

Abstract

Graphene is anticipated to exhibit excellent high-frequnecy carrier transport properties because of its excellent electronic properties. However, the measured device performances are deteoritated from theoretical values. We study on high-performance radio-frequency graphene devices using Y natural oxide that enables to form a good interface between graphene gate dielectrics. In this presentation, we will show the superiority of Y natural oxide, based on evaluation of high frequency carrier transport properties.