Relationship between crystal orientation and substrate position of titanium thin films in rf magnetron sputter depsoition

Abstract

Titanium thin films were prepared by rf magnetron sputtering to observe the difference in crystal orientation among the samples deposited at the different positions. Deposition was performed on silicon substrates of which surface had been oxidized, and characterization was performed by rocking curve measurement in x-ray diffraction. The films deposited under the condition: substrate temperature of 300 degrees in Celsius, argon pressure of 2.0 Pa, and rf power of 50 W showed no significant difference. This result does not agree with the fact that the tungsten films deposited at the outer position showed different orientation.