Contact properties of Ti3SiC2 and p-type GaN

Aiman bin Mohd Halil; Masakatsu Maeda; Yasuo Takahashi

doi:10.14920/jwstaikai.2012f.0.98.0

Preprints of the National Meeting of JWS

Session ID : 216

DOI https://doi.org/10.14920/jwstaikai.2012f.0.98.0

Conference information

Host: Japan Welding Society

Contact properties of Ti₃SiC₂ and p-type GaN

*Aiman bin Mohd Halil, Masakatsu Maeda, Yasuo Takahashi

Author information

Keywords: Gallium nitride, Ohmic contact, Schottky contact, Interfacial structure

CONFERENCE PROCEEDINGS FREE ACCESS

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Abstract

Properties between Ti₃SiC₂ and p-GaN contact have been investigated by forming Ti₃SiC₂ layer on p-GaN. The results show that Schottky height is reduced, but it is not enough to create ohmic contact.

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