抄録
Thermophotovoltaic generation of electricity was investigated through near-field and far-field radiation experiments by making use of a schottoky diode and a p-n junction cells made of GaSb semiconductor. The maximum power for the far-field was not dependent on a gap between the cell and an emitter surfaces, provided that its view factor was almost unity. On further decrease in gap, the output powers for the schottoky and the p-n junction cells became 4.4 and 3.9 times higher than those for the far-field radiation regime, respectively. The increase in output power might be originated from a near-field radiation effect, that is, an evanescent wave effect.
