Si₃N₄アブレーション層を通過するふく射エネルギ移動

抄録

The equilibrium compositions, special absorption coefficient, emittance and transmittance of Si₃N₄ ablation layer plasmas have been calculated for temperatures of 3000K and 5000K, thickness of 0.01, 0.1 and pressures of 0.1, 1 and 10 atmospheres. Calculations of radiation include molecular bands, atomic lines, and continuum processes. The emittance and transmittance results are applied to a simple shock layer model to predict the effectiveness of the Si₃N₄, ablation layers for a blockage of the high-temperature stagnation shock layer radiation. The results show that the photoionization process in Si atom is most effective in blocking the radiation and the Si₃N₄ ablation layers are very effective in reducing the radiative heating to a vehicle.