抄録
GaN-based ultraviolet (UV) light emitting diodes (LEDs) and UV laser diodes (LDs) were grown by a metalorganic chemical vapor deposition method. We reduced the self-absorption of emission light in UV-LED chips by removing the GaN templates and the sapphire substrates. In the case of UV-LDs, Al mole fraction in AlGaN layers was optimized. As a result, we succeeded in fabricating 365 nm UV-LEDs and UV-LDs which are useful for various industrial uses because of the same wavelength as i-line of high-pressure mercury vapor lamps.
