レーザー研究
Online ISSN : 1349-6603
Print ISSN : 0387-0200
ISSN-L : 0387-0200
中赤外領域半導体擬似位相整合波長変換デバイス
近藤 高志太田 生馬松下 智紀
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2008 年 36 巻 2 号 p. 58-63

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Recent progress of semiconductor-based quasi-phase-matching (QPM) wavelength conversion devices is reviewed.Compound semiconductors are promising materials for generating coherent light in the mid-infrared (IR) region because of their transparencies in the long-wave IR range and high second-order nonlinearities.Bulk-type and waveguide-type QPM devices have been developed using Ga As, and their high potentials are now being demonstrated. Wider-bandgap semiconductors are also studied as materials for the next-generation wavelength conversion devices.
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