抄録
A fast high-voltage switch has been developed by using insulated gate bipolar transistors (IGBTs). The IGBTsare connected in series to achieve a high voltage rating. An avalanche transistor is used as the gate driver. Thefast pulse generated by the avalanche transistor quickly charges the large input capacitance of the IGBT, resulting in a switch out of a fast high-voltage pulse. An output amplitude of 2.5kV with a rise time of 8ns hasbeen achieved; this characteristic is applicable to operating a plasma generator, a high-voltage switch for adischarge-pumped laser, and a Pockels cell driver
