抄録
A Type-II GaInAs/GaAsSb/GaInAs W-shaped quantum well applied on a GaAs substrate shows promise
in achieving a temperature-stable 1.3 μm wavelength laser. In this study, we demonstrated lasing operation
up to 100°C with a 1.3 μm wavelength ridge laser by improving the interface quality of the Type-II
quantum well. The temperature characteristics of the laser were evaluated, and the characteristic temperature
(T0) between 75°C and 100°C was found to be 92 K, which is much higher than that of InPbased
Type-I quantum well lasers.
