Journal of the Mass Spectrometry Society of Japan
Online ISSN : 1880-4225
Print ISSN : 1340-8097
ISSN-L : 1340-8097
報文
Charge Compensation of Insulators in Secondary Ion Mass Spectrometry (SIMS) Analysis
Yoshikazu HommaYoshikazu IshiiMasaharu Oshima
著者情報
キーワード: SIMS, Charge compensation
ジャーナル フリー

1984 年 32 巻 4 号 p. 345-356

詳細
抄録
Primary ion charging of insulators has been quantitatively investigated in SIMS analysis. Charging was evaluated by monitoring the energy distribution of secondary ions. Charging types are roughly classified into three groups, i.e., a thin film insulator, a lower-resistivity bulk insulator and a high-resistivity bulk insulator. Charging is completely compensated by electron beam flooding for the thin film and the lower-resistivity bulk insulators. However, complete charge compensation cannot be achieved by electron beam flooding for the high-resistivity bulk insulators. It is found that use of a conducting overlayer on a bulk insulator, together with electron beam flooding, can reduce charging. Surface conduction might be responsible for charge compensation. The effective range of surface conduction is about 150 μm.
著者関連情報
© 1984 by The Mass Spectrometry Society of Japan
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