抄録
The principle and apparatus of the static-SIMS are described with their applications for industrial characterization. Static-SIMS (S-SIMS), which is one of the surface sensitive techniques, has been used mainly to analyze organic surfaces. Recent developments in comprehension on the interaction between ions and solids, and remarkable progresses in apparatus have made its extensive application possible. Especially striking developments in TOF-SIMS are overcoming such usual weak points of S-SIMS as insufficiency of sensitivity or spatial resolution. In semiconductor manufacturing processes, as the performance of electronic devices becomes higher, the evaluation methods are required to have much higher sensitivity, accuracy and give more information. S-SIMS, with development of TOF-SIMS, could evaluate a trace surface contamination or a slight difference in the chemical structure of the surfaces with high sensitivity and accuracy, and it is considered to be quite useful for improvement of the semiconductor manufacturing processes.
