Use of SIMS to Determine Pure and Oxidized Elements in a Solid Surface

Abstract

A quantitative analysis of oxidized elements in a solid surface which consists of and oxidized element has been studied using a SIMS equipped with a quadrupole mass filter. The apparatus is able to introduce gas into the specimen chamber in amounts high as 1×10^-3 Torr without any problems for the primary beam system and the analyzer system by means of differential pumping techniques. The standard sample(Al, Si)composed of a pure and oxidized element is prepared by the method used for fabricating microelectronic devices. Ions such as Al⁺and Si⁺emitted from standard samples are represented by the linear superposition of ions emitted from the pure and oxidized element. The concentration of the oxidized element is determined by the ratio of the secondary ion intensity on exposure to oxygen to that on non-exposure to oxygen.