Abstract
The processing speed of the computer needs speeding up because of an increase in the packing density, and the frequency for recording should shift to the higher side. The eddy current loss is brought about by the use of the high frequency, and it can be reduced by increasing the electrical resistivity of the material. The multilayers produced by alternate combination of the metal and the insulator is thought to be as one of the effective methods for preparing the high resistivity material. In this work, the electrical resistivity of the Fe/Al2O3 multilayers produced by varying the thickness of the Fe and Al2O3 films have been discussed. Moreover, in order to produce the magnetic anisotropy the film was prepared by varying the incidence angle of the vapor deposition. The resistivity increases with increasing Al2O3 thickness. The resistivity shows a tendency of having a maximum value in the vicinity of angle θ=45° with further falling and rising behavior. On the other hand, the ratio of the resistivity for the current along the projectional direction of oblique incidence to that perpendicular to the projectional direction has a maximum value around the angle of 45° and afterwards decreases gradually. Theoretical values obtained by considering atomic arrangement are in agreement with experimental results.
