抄録
Metallic thin films deposited on Si wafers were analyzed by EPMA under grazing-exit geometry. The experimental setup consisted of the conventional SEM and EDX. The exit angle was controlled by moving the EDX up and down. After the SEM observation, the electron beam fixed on the analyzed position. And then, the intensities of characteristic X-rays were measured as a function of exit angle. These angle dependences were analyzed by curve fitting of the simulated curves. As a result, the thickness and the density of thin films were evaluated. The difference of the density of chromium thin films prepared by different methods was found. The GE-EPMA measurement was performed for Au–Ag layers on the Si wafer. The thin-film characterization for each layer was independently performed at localized region on Ag and Au layers.
