MATERIALS TRANSACTIONS
Online ISSN : 1347-5320
Print ISSN : 1345-9678
ISSN-L : 1345-9678
Characterization of Nanodome on GaN Nanowires Formed with Ga Ion Irradiation
Shunsuke MutoSandip DharaAnindya DattaChi-Wei HsuChin-Ting WuChing-Hsing ShenLi-Chyong ChenKuei-Hsien ChenYuh-Lin WangTetsuo TanabeTadashi MaruyamaHong-Ming LinChia-Chun Chen
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2004 Volume 45 Issue 2 Pages 435-439

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Abstract
Structure of nano-domes formed by Ga+ ion irradiation with a focused ion beam (FIB) apparatus onto GaN nanowires (NWs) was examined with conventional transmission electron microscopy (CTEM), electron energy-loss spectroscopy (EELS) and energy-filtering TEM (EF-TEM). The nano-dome consisted of metallic gallium, covered by a GaN layer, the structure of which is amorphous or liquid. It is considered that the dome structure is formed by preferential displacement of lighter element (N) and agglomeration of heavier one (Ga). 1 MeV electron irradiation onto the sample pre-irradiated by Ga+ ions at a dose below the threshold for the dome formation induced the N2 bubble formation without segregating Ga atoms, which suggests the radiation-enhanced diffusion (RED) of heavy atoms plays an important role in the nano-dome formation.
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© 2004 The Japan Institute of Metals and Materials
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