MATERIALS TRANSACTIONS
Online ISSN : 1347-5320
Print ISSN : 1345-9678
ISSN-L : 1345-9678
Agglomeration of Copper Thin Film in Cu/Ta/Si Structure
Joon Woo BaeJae-Won LimKouji MimuraMinoru Isshiki
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2004 Volume 45 Issue 3 Pages 877-879

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Abstract

Copper agglomeration in Cu(100 nm)/Ta(50 nm)/Si structure deposited by ion beam deposition was examined. Copper thin films were annealed at 650°C for 1 to 60 min in hydrogen atmosphere. The surface morphology, crystalline microstructure and electrical resistivity were investigated by field-emission scanning electron microscopy, X-ray diffraction and Van der Pauw method, respectively. Experimental results revealed that nucleation and growth of voids ocurred in the copper film annealed for 5 min. Further annealing made the film a connected island structure and then isolated island structure.

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© 2004 The Japan Institute of Metals and Materials
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