Electrical Resistivity and Morphology of Sn_1−x/Si_x Core–Shell Cluster Network Prepared by a Plasma-Gas-Condensation Cluster Source

Abstract

Sn_1−x/Si_x cluster assembled films have been prepared by a plasma-gas-condensation cluster beam deposition apparatus. Transmission electron microscope images indicate that individual clusters have core–shell morphology, where Sn cores are covered by Si shells. Temperature dependence of electrical resistivity exhibits a metallic behavior and a superconducting transition at low temperature for 0 < x < 0.20, while a semiconductor-type behavior and no superconductivity down to 2 K for x > 0.29. These results indicate that the cluster network and/or core–shell morphology Sn_1−x/Si_x cluster assembled films changes with x.