抄録
Cu(In,Ga)Se2 (CIGS) films were prepared by thermal treatment of In/CuGa metallic precursors using dimethylselenium, which is a less hazardous Se source than H2Se gas. CIGS films were fabricated using various heating times and dimethylselenium supply rates. We investigated the effect of the selenization temperature and the dimethylselenium supply rate on the crystal phase and surface morphology of the films. It was demonstrated that deimethylseleniumt is effective in preparation of the CIGS films as the alternative material of H2Se.
