抄録
The grain growth after light rolling below 10% in grain-oriented silicon-iron sheets containing 3.50 and 1.43% Si was studied optically and magnetically in order to obtain fundamental data for the establishment of a strain-annealing procedure as a modification of the Goss process. It has been found that, in initially fine-grained sheet specimens, the grain growth increases more prominently at two reduction rates, namely, at 0.5 to 2% and 6 to 7%. Their resulting preferred orientations are different; in the former, a marked development of the Goss texture occurred, possibly involving no primary recrystallization, while in the latter recrystallization from the Goss texture also occurred.
The recrystalization from the Goss texture occurred also on initially coarse-grained specimens. It has been found that the optimum point for producing silicon-iron sheets with high permeability and low hysteresis loss is at the first grain growth maximum of 2% reduction for initially fine-grained sheet specimens.
