電子線グラフト重合法によるイオン交換膜の開発 －超高分子量ポリエチレンを基材として用いた場合における 電子線架橋がグラフト重合へ与える影響－

抄録

Crosslinking of ultra–high molecular weight polyethylene (UHMWPE) film is induced by electron beam irradiation. UHMWPE film was irradiated at doses ranging from 0 to 800 kGy. Gel fraction, trans–vinylene, peak melting temperature and melting enthalpy were measured. From the results of gel fraction and amount of trans–vinylene, the amount of crosslinking was found to increase as the irradiation dose increased. However, the main chain scission occurred below 60 kGy. When chloromethylstyrene (CMS) was graft–polymerized onto UHMWPE film using electron– beam–induced graft polymerization, the graft ratio increased as dose increased within the range of 0 to 100 kGy. When the dose was 200 kGy or more, the graft ratio decreased as dose increased, and when the dose was 400 kGy or more, dimensions of the film did not increase and polymerization progressed only on the surface of the film.