抄録
This paper gives a method of the specimen preparation for the in situ observation at high temperatures by X-ray diffraction. This method is very simple and needs not the special instrument. This method is, however, much effective to the semiconductor wafers, particularly to the III–V compound semiconductor wafers, which have high vapor pressures near at the melting points, such as InP, GaAs and GaP. The melting points of the wafers are reported as 1060, 1240 and 1465°C, respectively. This method can be applied to these wafers without destructing these specimens, even at such high temperatures near the melting point.
A few experimental results using this newly devised method are presented.
