スピンエレクトロニクス
室温作製MgO(100)配向膜を用いた垂直MTJ構造の試作
2008 年 32 巻 3 号 p. 329-333
詳細
2008 年 32 巻 3 号 p. 329-333
MgO (100) textured films can be prepared by reactive facing targets sputtering at room temperature when they were deposited on (100) oriented Fe buffer layers. This method allows fabrication of perpendicular magnetic tunnel junction (p-MTJ) with MgO tunneling barrier layer and rare-earth transition metal amorphous alloy (RE-TM alloy) thin films as perpendicularly magnetized layers. The 3nm-thick MgO tunneling barrier layer in p-MTJ multilayer prepared on a glass substrate revealed (100) crystalline orientation. Anomalous Hall effect measurement clarified that the 3nm-thick Fe buffer layers attached to the two end of MgO tunneling barrier layer magnetized vertically to the film plane because of the strong exchange coupling with RE-TM alloy layers. TMR ratio of 31% was observed in the multilayered p-MTJ element.
