抄録
The thermally assisted reversal of micro-magnetization was simulated for sub-100-nm dots with perpendicular magnetization by using a Langevin-Landau-Lifshitz-Gilbert equation, where thermal effects are modeled by random fields. Two different thermally assisted reversal methods of 1) a thermal relaxation scheme and 2) a switching scheme were compared. Superior performance was obtained for the thermal relaxation scheme from the view point of reducing the reversal field. An auto correlation function in the time domain was introduced to analyze the stochastic properties of the thermally fluctuating directions of magnetization.
