Journal of the Magnetics Society of Japan
Online ISSN : 1882-2932
Print ISSN : 1882-2924
ISSN-L : 1882-2924
スピンエレクトロニクス
フェリ磁性ホイスラー合金Mn2VAlエピタキシャル薄膜の元素選択的磁気特性評価
窪田 崇秀児玉 謙司中村 哲也桜庭 裕弥大兼 幹彦永沼 博高梨 弘毅安藤 康夫
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ジャーナル オープンアクセス

2010 年 34 巻 2 号 p. 100-106

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  We successfully fabricated L21-ordered Mn2VAl Heusler thin films and evaluated their ferrimagnetic properties by soft x-ray magnetic circular dichroism (XMCD). The buffer layers and annealing temperatures were varied to prepare the Mn2VAl films. We discovered that Mn2VAl could be ordered in an L21 phase well when it was deposited directly onto an MgO (001) single crystalline substrate. The maximum values of L21 and B2 long-range order parameters we obtained were about 0.5 for both phases for samples without a buffer layer, when substrates were heated at 500°C or 600°C. The saturation magnetization (Ms) for these samples was roughly 150 emu/cc. This is rather small compared to that expected from the ideal Slater-Pauling behavior, which might be due to the suppressed degree of L21 or B2 ordering. Ferrimagnetism in the Mn2VAl, ferrimagnetic coupling between Mn and V moments was clearly observed by using the XMCD technique in well-ordered L21-Mn2VAl film as has been predicted in theoretical investigations.

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© 2010 (社)日本磁気学会
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