応力アシスト磁化反転を用いたGMR多層膜の作製

抄録

  A Stress-Assisted Magnetization Reversal (SAMR) method has been demonstrated in a perpendicular GMR multilayer to reduce a power consumption during the magnetization-reversal process in a perpendicular magenetoresistive random access memory. A giant magnetoresistive multilayer of Cu(15nm)/Terfenol-D(10nm)/Cu(3nm)/TbFeCo(30nm)/Cu(15nm) was prepared. The perpendicular components of magnetization reversal in the GMR multilayer were observed during the SAMR process by using the anomalous Hall effect. As a result, the magnetization of a free layer was shifted from perpendicular to in-plane under the application of a stress of 279MPa.