逆ペロブスカイトMn₃GaN薄膜の構造と電気的特性

抄録

  Mn₃GaN thin films were grown on MgO and SrTiO₃ substrates by ion beam sputtering, and their structural and electric properties have been investigated. Control of growth temperature is important to obtain single phase Mn₃GaN thin films. Resistivity of Mn₃GaN thin film increase with increasing temperature and reach a maximum at 286 K-297 K. The maximum resistivity is attributed to the magnetic transition from antiferromagnetism to paramagnetism. On SrTiO₃ substrates which have 0.2% lattice mismatch to Mn₃GaN, single crystal Mn₃GaN thin films were grown.