Spin Hall Effect in Topological Insulators
論文ID: 2009RV001
この記事には本公開記事があります。
詳細
論文ID: 2009RV001
The giant spin Hall effect (SHE) in topological insulators (TIs) is very attractive for applications to various spintronic devices, notably spin-orbit torque magnetoresistive random-access memory (SOT-MRAM). In this paper, we review the recent progress on the giant SHE in TIs, with emphasis on the role of topological surface states. We discuss current challenges and future prospects for TIs as a realistic material in SOT-MRAM.
