金属銅融液法によるCr₃SiおよびCr₅Si₃単結晶の育成とその特性

抄録

The single crystals of Cr₃Si and Cr₅Si₃ were prepared by the high temperature copper solution method using metal chromium and silicon powders as starting materials in an argon atmosphere. The conditions for obtaining these crystals with one-phase materials and a relatively large size were determined. As grown Cr₃Si and Cr₅Si₃ single crystals were used for chemical analysis, and measurements of unit cell dimensions, Vickers microhardness and electrical resistivity.