Reverse characteristics of Ge p-n junctions are studied in detail, and useful and predictable relations obtained. These relations are applicable to actual diodes, alloyed on thin Gewafers.
The two most important findings are:
(1) the design center of the base width should be about 0.55mm for junction diodes alloyed on base materials of _??_sec., _??_, and S_??_200 cm/sec. in the case of P+-N-R structure, and
(2) In the case of n-type Ge wafers of nearly 20Ωcm and 0.5mm thick, it is possible to maintain VB above 500 volts by keeping _??_ sec., and S>500 cm/sec.
The behavior, _??_., is observed for junction diodes made from a small lifetime starting materials of _??_>300μ sec. and nearly 20Ω cm resistivity.
