応用物理
Online ISSN : 2188-2290
Print ISSN : 0369-8009
銅単結晶面における電着コバルトの結晶成長
福田 整司
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ジャーナル フリー

1958 年 27 巻 4 号 p. 236-242

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The crystal growth of Co electrodeposited on electrolytically eched (111), (110), (100) and (311) faces of Cu single crystal is systematically studied by means of electron diffraction. Especially the dependence of the structure on pH of electrolytic solutions and current density (c. d.), and the growth conditions of β-Co (ƒ. c. c.) and α-Co (h. c. p.) are investigated in detail. The main results obtained are as follows.
1) Generally at the initial thin layer, only β-Co of parallel orientation is formed, whereas at larger thickness β-Co of the other orientations and α-Co begin to grow.
2) At low pH and low c. d., the outer face of the initial thin layer is rough on a microscopic scale, but that of thick layer has a tendency to form a fairly smooth surface parallel to the substrate. At higher c. d., the deposits are bounded by {111} planes.
3) {111} twins are formed only in a solution of low pH but not low c.d.
4) The general rule for the orientation of the deposit that <110> β-Co and <1120> α-Co are always parallel to <110> of the substrate is found.
5) α-Co with the orientation which is considered to have been formed as the result of stacking fault on {111} planes of β-Co grown in parallel orientation is not observed.
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