ゲルマニウムダイオードの強制酸化による “Passivation” について
1962 年 31 巻 2 号 p. 120-123
詳細
1962 年 31 巻 2 号 p. 120-123
When Ge diodes are kept in a vessel containing a trace of water vapor, electric characteristics of the diode deteriorate rapidly.
Passivation of Ge diode against water vapor is effected by leaving Ge in dry oxygen gas and, baking it in oxygen atmosphere. Resistant and stable surface was successfully grown on Ge by baking at 120°C for 4 hours or at 140°C for 1 hour. This can be explained by the formation on Ge surface a broad energy gap surface state suggested by Kingston's model.
