抄録
The impedance of a semiconductor wafer inserted in a waveguide is studied theoretically and experimentally. The real part of the impedance becomes maximum when the ratio, η, of the displacement current to the conduction current is unity; at this instant the microwave angular frequency becomes equal to the reciprocal of the relaxation time, τ0, for dissipation of charge density. At the frequency of 9 GC/sec, the real part is maximum for Ge of 13 Ω-cm and for Si of 17 Ω-cm.
The resistance part of the impedance decreases gradually, while the reactance part approaches to a constant value when the displacement current begins to dominate at higher resistivity at which the microwave period is shorter than τ0.
At η=1, the normalized imaginary part of the impedance as a function of frequency is maximum and the normalized real part is equal to 0.5.
Experimental results at 9 GC/sec agree fairly well with the theory.
