新しい電流磁気効果の応用

磁気抵抗素子と磁気リアクタンス素子

抄録

The magnetoresistance effect in high-mobility intermetallic semiconductors is investigated from the engineering point-of-view. Fundamental characteristics of various kinds of magnetoresistive element together with the basic knowledge of the galvanomagnetic effect in semiconductors are dealt with. It is shown that the magnetoresistive element has many advantages over the Hall element in that it has only two-terminals higher sensitivity and more freedom in circuit construction. Principles and performances of the applications of magnetoresistive elements to the wide varieties of instruments and controls, such as flux meter, displacement transducer, analogue multiplier, wattmeter for d. c., a. c. and microwave power, chopper, mixer, Fourier analyzer and so on are briefly described. Another new kind of galvanomagnetic element-the magnetoreactive element-, in which the reactance component is produced and increased by a magnetic field, is also described about its principle with experimental results. The possibility of its application to instruments is also discussed. These new galvanomagnetic elements are considered to become of practical use in the wide field of electronics.