不純物を添加したVO2単結晶の育成とその電気的性質
1968 年 37 巻 9 号 p. 815-820
詳細
1968 年 37 巻 9 号 p. 815-820
Doped single crystals of VO2/ M were prepared by a modified oxychrolide decomposition method, where M stands for Ti, Nb, Si, Ge and Sn. X-ray observation revealed that all the samples show MoO2 type structure at room temperature as with undoped VO2. Resistivity ρ and thermoelectric power η were measured between 100° and 400°K on several doped crystals. The values of ρ and η change abruptly at transition temperature Tt as in the case of undoped VO2. Increase of Tt was observed with VO2 containing Si, Ge and So, while decrease of Tt was observed with Nb or Ti. In terms of Adler's and Hanamura's model the shifts of Tt seem to be caused by the lattice distortion introduced with dopants.
