高周波スパッタリングにおける膜の析出機構
1973 年 42 巻 9 号 p. 882-888
詳細
1973 年 42 巻 9 号 p. 882-888
The process of film deposition by rf sputtering was investigated by observing the deposition rate and the thickness of the cathode dark space as a function of argon pressure in an rf diode sputtering system with a spherical titanium cathode, which avoids any edge effect on the target.
The deposition rate increased with pressure in the region from 3×10-3 to 10-2 torr, but decreased as the pressure was raised above 2×10-2 torr.
It is found that these phenomena can be explained by taking into account the ion energy bombarding the target and the transport process of the sputtered atom.
