抄録
Department of Electronic Mechanical Engineering, Faculty of Engineering, Nagoya University
Observations of semiconductor devices were made by the secondary electron image mode of the low voltage SEM. It was found that there exist appropriate imaging conditions under which the passivation surface of devices can be imaged without charging disturbances. Under the same conditions a method was proposed of inspecting the voltage profile of the circuits underneath the passivation by detecting the reversible contrast variations discovered in the present work, Systematic investigations were made to find out factors which affect the reliability of the method. Finally, anomalous surface layer model was concisely described to provide a consistent interpretation for the contrast mechanism.
