抄録
Polycrystalline Bi3.15Nd0.85Ti3O12 (BNdT) ferroelectric thin films were deposited by chemical solution deposition. The Bi-layered perovskite structure was achieved by rapid thermal annealing the spin-on films at 700 0C for 3 min. Well-saturated hysteresis loops with remanent polarization (Pr) around 10 mC/cm2 were obtained on Pt/BNdT/Pt capacitors. The effect of forming gas (FG: 5%H2+95%N2) anneal on electrical properties and microstructures of BNdT films were characterized by X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and electric measurements. Pr values was considerably suppressed after forming gas anneal at 400 0C for 10 min. From structure characterization, it is deduced that the suppressed Pr was not due to decomposition of BNdT, but might be ascribed to the increased switching resistance due to formation of polar hydroxyl bonds by penetrated hydrogen ions bonded with oxygen ions. It was also found that high fatigue resistance of Pt/BNdT/Pt capacitors was not degraded by FG anneal.
