抄録
Ba0.75Y0.166Nb2O6 (BYN) films were deposited by RF magnetron sputtering for the first time. The thin films were grown on (100)MgO and (100)Si substrates. X-ray diffraction 2 deg scans indicate single crystalline layer with the (001) orientation perpendicular to the substrates plane. However, X-ray polefigure revealed that the films have two in-plane orientations. The unit cell of BYN is rotated in the plane of the film by ±15o with respect to the MgO substrate unit cell. The films deposited on Si substrates were polycrystalline with random orientations. The optimized conditions were deposition temperature 750 oC, RF power 150 W, and pressure 50 mTorr, in which the thin films with good crystallinity and relative smooth surface morphology can be obtained. The highest crystallinity was obtained at 750 oC with 200 W rf power. However the surface morphology was quite rough.
