抄録
Yttria stabilized zirconia (YSZ) is expected as a buffer layer between high temperature superconducting oxide films and silicon substrates, where smaller dielectric constant and smaller loss tangent are required for practical use. In this study, YSZ and Sr-doped YSZ films were prepared by MOCVD. The effects of deposition conditions and Sr addition on the electrical properties were investigated. YSZ films prepared by MOCVD showed superior dielectric properties comparable to those of single crystal YSZ. Sr addition to YSZ was effective to improve the dielectric properties. The dielectric constant of the Sr added YSZ films showed the minimum value (ε=16) at SrO content of 5 mol%.
