抄録
Pb(Zr 0.53 ,Ti 0.47 )O 3 (PZT) thin films exhibits various electrical properties, depending on a various parameters of orientation, residual stress and composition. As a result, processing methods and substrates have large effects on the properties of the resultant PZT films. In this study, PZT thin films were deposited on the indium tin oxide (ITO) /glass substrates, which shows high transmittance for the visible light. Therefore, PZT films on the ITO/glass substrates are promising for a transparent pyro-sensor and thin film actuator. Precursor solutions were prepared from lead acetate trihydrate, titanium and zirconium alkoxides with different amount of excess lead. PZT films were deposited at 873 K for 5 min. by a rapid thermal annealing (RTA). The resultant films exhibited random orientation and relatively large remanent polarization (Pr) up to 36 μC/cm2 as well as the good piezoelectricity, depending upon the amount of excess lead.
