日本セラミックス協会 年会・秋季シンポジウム 講演予稿集
16th Fall Meeting of The Ceramic Society of Japan & The 5th International Meeting of Pacific Rim Ceramic Societies(PacRim5)
セッションID: 15-I-03
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The Homologouse Layered Perovskite Ferroelectric Thin Films of A(m-3)Bi4TimO(3m+3)
*Yan-Feng CHENShan-Tao ZHANGZhi-Guo LIUNai-Ben MING
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The effects of A-site substitution, perovskite cells number alternation on the properties of the layered ferroelectric thin films of A(m-3)Bi4TimO(3m+3) were investigated. The fatigue properties of Bi4Ti3O12 thin films were improved dramatically by alternating the number of perovskite cell, m, and partially substituting Bi by Sr. The remnant polarization of these films are parity dependent on m whereby great polarization is related to odd m and small one to even. With the even m, Nd substitution of SrBi4Ti4O15 resulted in the polarization along c-axis which is zero for the pure one. The evidence showed that the ferroelectric characters of layered ferroelectrics were sensitive to the elements on A- and B-sites which would be very useful to manipulate the anisotropy of the layered ferroelectrics.
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© The Ceramic Society of Japan 2003
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