抄録
GaN crystals were grown on various substrates by reaction with NH3 and Ga2O gas formed by reaction of Ga2O3 with carbon. The reaction of Ga2O3 with carbon was performed at 950°C. The generated Ga2O gas was transported by Ar into the inner silica tube. The Ga2O gas was reacted with flowing NH3 on the substrates placed in the other silica tube at 1000°C, resulting in the growth of crystals. The crystals were identified as wurtzite GaN by XRD and Raman spectroscopy. Factors affecting the growth of GaN crystals were examined to find the most suitable condition. As a result, needle crystals of several tens μm~1mm in length with the cross section of tetragon were grown on a graphite substrate at 1000°C. When a sapphire substrate was used, small octahedral crystals were grown on the surface.
