抄録
Ferrolectric Random Access Memory (FRAM) has many applications becauseof its high speed and non-volatility. The key component of FRAM is aferroelectric capacitor containing Pb(Zr,Ti)O3 which is subjectpolarization losses by imprint by baking at elevated temperature andhydrogen degradation. Understanding and reducing polarization losses isessential for FRAM device reliability. In this presentation recentresults will be presented on the measurement and modeling of imprint aswell as use of deuterium gas to characterize hydrogen degradation in PZTcapacitors.
