抄録
The Pb(Zr,Ti)O3 (PZT) thin films were prepared on SrTiO3 seeds using (111)Pt/IrOx/SiO2/(100)Si substrates by cold-wall type metalorganic chemical vapor deposition method (MOCVD). The SrTiO3 seed layers were prepared by pulsed laser deposition (PLD) method at 400-600oC with various deposition time. The crystalline phases of SrTiO3 seed layers were (100) and (110) mixed-oriented phases. About 100nm thickness of PZT thin films were crystallized at 290oC on 5min deposited SrTiO3 seed layers. In the two-step growth process, the SrTiO3 seed layer played the important role of providing nuclei in the succeeding growth of PZT thin films. The electrical property of PZT film prepared at 290oC on 5min deposited SrTiO3 seeds showed 22uC/cm2 of remanent polarization (Pr) and 165kV of coercive field (Ec). The influences of source supply conditions for low-temperature PZT thin film growth are still investigated.
