Preparation of calcium silicate films by MOCVD

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Ca-Si-O films were prepared by a vertical cold-wall type CVD apparatus using organometallic precursors of Ca(dpm)₂ and tetra ethyl orthosilicate (TEOS). The effects of molar ratio (R_Ca/Si) in precursors and substrate temperature (T_sub) on the crystal phase, microstructure and deposition rate of Ca-Si-O films were investigated. Ca₂SiO₄ films in a main phase were obtained at T_sub= 850⁰C and R_Ca/Si = 1.12 to 5. With increasing T_sub, Ca₃SiO₅ and CaSiO₃ phases were formed at T_sub= 950⁰C to 1050⁰C and R_Ca/Si = 0.14 to 5. With increasing R_Ca/Si, the microstructure changed from a cauliflower like to smooth/granular type texture. The maximum deposition rate was about 240 micro meter h^-1 at T_sub=1050⁰C, and R_Ca/Si= 0.36.